Extreme Huygens' metasurfaces based on quasi-bound states in the continuum

We introduce the concept and a generic approach to realize Extreme Huygens' Metasurfaces by bridging the concepts of Huygens' conditions and optical bound states in the continuum. This novel paradigm allows creating Huygens' metasurfaces whose quality factors can be tuned over orders of magnitudes, generating extremely dispersive phase modulation. We validate this concept with a proof-of-concept experiment at the near-infrared wavelengths, demonstrating all-dielectric Huygens' metasurfaces with different quality factors. Our study points out a practical route for controlling the radiative decay rate while maintaining the Huygens' condition, complementing existing Huygens' metasurfaces whose bandwidths are relatively broad and complicated to tune. This novel feature can provide new insight for various applications, including optical sensing, dispersion engineering and pulse-shaping, tunable metasurfaces, metadevices with high spectral selectivity, and nonlinear meta-optics

Annealing-induced reduction in nanoscale heterogeneity of thermally evaporated amorphous As2S3 films

The morphology and structural order of thermally deposited and annealed amorphous As2S3 films have been investigated using high resolution transmission electron microscopy. It was found that both the as-deposited and annealed films contained sparsely distributed nanocrystallites of the orpiment As2S3 crystalline phase. However, from selected area electron diffraction both films appeared amorphous. Fluctuation electron microscopy revealed that the as-deposited film contained greater nanoscale inhomogeneity. Low temperature annealing reduced the nanoscale inhomogeneity and resulted in a more homogeneous and energetically favorable network. The reduction in nanoscale inhomogeneity upon low temperature annealing was accompanied by the appearance of a first sharp diffraction peak in the diffraction pattern. This first-sharp diffraction peak has been attributed to chemical ordering of interstitial voids. Our measurements suggest that this chemical short-range ordering is associated with the dissolution of the energetically unfavorable larger correlated structures that contribute to the inhomogeneity of the as-deposited film

Raman spectra of GexAsySe1−x−y glasses

Various Ge–As–Se glasses spanning a mean coordination number (MCN) from 2.2 to 2.94 have been investigated using differential scanning calorimetry and Raman spectroscopy. The glass transition temperature Tg was found to increase with increasing MCN, except for those glasses located within the nanoscale phase-separated region of the phase diagram. The evolution of Raman features at wavenumbers from 150 to 350 cm⁻¹ exhibits two transitionlike features. Merging of the 225 and 250 cm⁻¹ modes at MCN=2.5 is a symbol of the extinction of Se–Se bonds. Additionally, the appearance of two modes at 280–290 and 170 cm⁻¹ at MCN>2.7 come from the defect modes of ethanelike Ge₂Se₆/₂. The increase in the scattering from these defects is an important factor leading to enhanced optical loss in the glasses with high MCN.This research was partly supported by the Australian Research Council through its Centres of Excellence and Federation Fellow Programs

Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon

For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a TiO₂capping layer deposited by means of thermal atomic layer deposition (ALD). In this work, we studied the influence of different thermal post-deposition treatments and film thickness for the activation of passivating ALD Al₂O₃ single layers and Al₂O₃/TiO₂ stack layers. Our experiments show a substantial improvement of the passivation for the Al₂O₃/TiO₂ stack layers compared to a thin single Al₂O₃ layer. For the stacks, especially with less than 10 nm Al₂O₃, a TiO₂capping layer results in a remarkably lower surface recombination. Effective fixed charge density of Al₂O₃/TiO₂ stack layers increases after TiO₂deposition and O₂ annealing. It is also demonstrated that the enhanced surface passivation can be mainly related to a remarkably low interface defect density of 1.1 × 10¹⁰ eV¯¹ cm¯², whereas post-TiO₂ heat treatment in O₂ ambience is not beneficial for the passivation of silicon, which is attributed to increasing interface defect density of stack layers.This project has been supported by the Australian Government through the Australian Solar Institute, part of the Clean Energy Initiative

Highly transmissive subtractive color filters based on an all-dielectric metasurface incorporating TiO2 nanopillars

Transmissive subtractive color filters are proposed and demonstrated that take advantage of an all-dielectric metasurface based on a lattice of TiO2 nanopillars (NPs), rendering a high transmission efficiency that exceeds 90%. TiO2 NP elements have been created that exhibit a high aspect ratio. Specifically, a series of lithographic processes are conducted to form a narrow and deep hole in the photoresist, which is accompanied by atomic layer deposition of TiO2. A broad palette of vivid colors encompassing the visible band has been obtained by adjusting the NP diameter for a constant duty ratio of 0.35. For the NP resonator, the electric and magnetic field profiles in conjunction with the scattering cross-sections have been meticulously investigated to theoretically validate that the resonant transmission dips are primarily governed by the simultaneous excitation of an electric dipole and a magnetic dipole via Mie scattering.National Research Foundation of Korea (NRF), funded by the Korean government (MSIP) (No. 2016R1A2B2010170); Kwangwoon University; Australian Research Council Future Fellowship (FT110100853, Dr. Duk-Yong Choi)

Thermal annealing of arsenic tri-sulphide thin film and its influence on device performance

Arsenic tri-sulphide (As₂S₃)thin filmwaveguides have been used successfully as nonlinear optical devices for all-optical signal processors. For such devices, low propagation loss is vital if high performance is to be obtained. In this study, thermal annealing was employed not only to stabilize the physical properties of the films, but also to reduce the sources of light attenuation in the as-deposited material. Here we investigated heat-induced changes to the microstructure and optical properties of As₂S₃thin films and, based on this information, determined the best annealing conditions. The refractive index of the films rises with annealing due to thermal densification and increased heteropolar bond density. The growth of surface roughness and thermal stress in the film, however, limits the annealing temperature to ∼130 °C. We fabricated and analyzed waveguides produced from as-deposited and annealedfilms and found that the propagation loss of the guides dropped by ∼0.2 dB/cm as a result of appropriate annealing.Rayleigh scattering and absorption from defects associated with phase separation, homopolar bonds, voids, and dangling bonds in the as-deposited film are shown to contribute to the higher light attenuation in unannealed films.This research was supported by the Australian Research Council through its Centre of Excellence program

Third-harmonic generation in photonic topological metasurfaces

We study nonlinear effects in two-dimensional photonic metasurfaces supporting topologically-protected helical edge states at the nanoscale. We observe strong third-harmonic generation mediated by optical nonlinearities boosted by multipolar Mie resonances of silicon nanoparticles. Variation of the pump-beam wavelength enables independent high-contrast imaging of either bulk modes or spin-momentum-locked edge states. We demonstrate topology-driven tunable localization of the generated harmonic fields and map the pseudospin-dependent unidirectional waveguiding of the edge states bypassing sharp corners. Our observations establish dielectric metasurfaces as a promising platform for the robust generation and transport of photons in topological photonic nanostructures.Comment: 5 pages, 5 figure

Polarization-independent chalcogenide glass nanowires with anomalous dispersion for all-optical processing

We demonstrate the design and fabrication of square Ge11.5As24Se64.5 (Ge11) nonlinear nanowires fully embedded in a silica cladding for polarization independent (P-I) nonlinear processing. We observed similar performance for FWM using both TE and TM modes confirming that a near P-I operation was obtained. In addition we find that the supercontinuum spectrum that can be generated in the nanowires using 1ps pulse pulses with around 30W peak power was independent of polarization

The Impact of Thermal- and Photo-annealing of Chalcogenide Films for Optical Waveguides

We applied thermal- and band-edge light annealing on an as-deposited As2S3 film to mitigate its phase separation and, thus to improve the propagation losses of fabricated optical waveguides. Studies of the film micro structure revealed a difference between atomic bonds and linked phases among the as-deposited, thermally-annealed, and optically-annealed films. We fabricated rib-type waveguides with 4 micron width from 0.85 μm thick films, and measured the insertion losses. Around 0.4 and 0.2 dB/cm propagation losses were obtained in the waveguides produced from as-deposited and annealed films, respectively. The waveguides produced from photo-annealed film showed almost the same propagation losses to those from thermally-annealed material. Our results, however, indicate optical-annealing provides some advantages over thermal annealing for waveguide fabrication, such as the absence of film cracking which observed at high temperature processing

The evolution of bond structure in Ge33As12Se55 films upon thermal annealing

The evolution of bond structure of laser deposited Ge33As12Se55 films under various processing conditions has been investigated by X-ray photoelectron spectroscopy. It was found that a large number of Se-rich structures in the as-grown film may coalesce with As and Ge after annealing at high temperatures. In addition, both Ge and As 3d spectra show the presence of oxides. The oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thickness of the oxidized layer was extracted for the film annealed at various pressures and temperatures